职位描述
1、Translate system requirements to chip and block level architecture and specifications
2、Design analog and mixed-signal circuits to meet objective specification with top-down approach, from top level partition down to block level transistor design
3、Simulate sub-blocks and full chip across process, voltage, and temperature corners
4、Collaborate with IC design lead and other design engineers to meet design deadlines
5、Prepare detailed design and simulation documents for block and top-level design reviews
6、Supervise IC layout engineer on floor planning and critical circuit layout
7、Work with IC validation engineer on bench evaluation and test correlation
8、Support test engineer to develop test hardware and program for mass production
9、Assist product engineer on final product release to mass production
10、Help quality and reliability engineer on failure analysis and yield improvement
Requirements
1、Master’s Degree in Electrical Engineering with 5+ years of relevant work experience
2、Good knowledge of analog and mixed-signal design with an emphasis on analog
3、Good knowledge of device physics and semiconductor IC processes
4、Previous design experience with integrated power conversion circuits, Buck, Boost, Buck-Boost regulators, switched-cap converters, or LDOs preferred
5、Previous design experience with GaN driver IC, high-voltage half-bridge gate driver IC, or isolated gate driver IC design preferred
6、Familiar with power management common topologies and control theories
7、Demonstrated strong analytical and problem-solving skills
8、Strong verbal and written English communication skills
9、Strong time management skills that enable on-time project delivery
10、Ability to work in teams and collaborate effectively with people in different functions
11、Ability to work effectively in a fast-paced and rapidly changing environment
12、Ability to take the initiative and drive for results
工作地点

公司信息
公司介绍
英诺赛科于2015年12月成立,是一家专业从事新型第三代半导体材料、器件以及集成电路开发与制造的高科技公司,在全球首次实现了8英寸硅基氮化镓材料与器件的大规模量产。现有员工1500多人,在珠海设有研发中心及生产基地,在苏州设有管理中心及大规模生产基地,在深圳设有应用研发中心,在南京、成都、上海、北京、台湾、日本、美国等国家及地区设有办事机构或代表处。英诺赛科掌握8英寸硅基氮化镓材料、器件及集成电路设计、制造全产业链核心技术,汇聚各国半导体产业精英人才,共同打造功率与射频半导体国际一流品牌,并与多家国际技术研发机构开放合作,形成半导体产业跨国创新联盟。英诺赛科采用IDM (Integrated Device Manufacturer) 全产业链模式,致力于打造一个集研发、设计、外延生长、芯片制造、测试与失效分析为一体的第三代半导体生产平台。产品涵盖高低压功率半导体器件、IC及射频器件,是目前全球唯一能够同时量产低压和高压硅基氮化镓芯片的企业。公司产品具有小尺寸、高性能、低成本、高可靠性等优势,全面助力新能源汽车、5G通信、人工智能、无线充电与快充、数据中心及激光雷达等行业高效、节能、绿色发展。英诺赛科作为中国“芯”动力,将以融汇全球高端智力资源,研发顶尖半导体应用产品的决心,秉承“创新引领时代,同心筑梦中国,用’芯’点亮未来”的使命,蓄势待发,为国家第三代半导体腾飞做出贡献。

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